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tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm, tisp4240h3lm thru tisp4400h3lm bidirectional thyristor overvoltage protectors product information 1 november 1997 - revised october 2000 copyright ? 2000, power innovations limited, u k information is current as of publication date. products conform to specifications in accordance with the terms of power innovations standard warranty. production processing does not necessarily include testing of all parameters . telecommunication system high current overvoltage protector s a bourns compan y l 8 kv 10/700, 20 0 a 5/310 itu-t k.20/21 ratin g l ion-implanted breakdown region precise and stable voltage low voltage overshoot under surg e l rated for international surge wave shape s devic e v dr m v v (bo ) v ?407 0 5 8 7 0 ?408 0 6 5 8 0 ?409 5 7 5 9 5 ?411 5 9 0 11 5 ?412 5 10 0 12 5 ?414 5 12 0 14 5 ?416 5 13 5 16 5 ?418 0 14 5 18 0 ?422 0 16 0 22 0 ?424 0 18 0 24 0 ?425 0 19 0 25 0 ?426 0 20 0 26 0 ?429 0 22 0 29 0 ?430 0 23 0 30 0 ?435 0 27 5 35 0 ?439 5 32 0 39 5 ?440 0 30 0 40 0 wave shap e standar d i ts p a 2/1 0 s gr-1089-cor e 50 0 8/2 0 s iec 61000-4- 5 30 0 10/16 0 s fcc part 6 8 25 0 10/70 0 s itu-t k.20/21 fcc part 6 8 20 0 10/56 0 s fcc part 6 8 16 0 10/100 0 s gr-1089-cor e 10 0 l low differential capacitance . . . 8 0 pf max . l ................. ul recognized componen t descriptio n these devices are designed to limit overvoltages on the telephone line. overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. a single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication how to orde r devic e packag e carrie r order a s tisp4xxxh3l m straight lead do-92 (lm ) bulk pac k tisp4xxxh3l m tape and reele d tisp4xxxh3lm r formed lead do-92 (lmf ) tape and reele d tisp4xxxh3lmf r insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etcetera . device symbo l lmf package (lm package with formed leads) (top view) nc - no internal connection on pin 2 nc t(a) r(b) md4xakb 1 2 3 lm package (top view) nc - no internal connection on pin 2 nc t(a) r(b) md4xat 1 2 3 t r sd4xaa t erminals t and r correspond to the alternative line designators of a and b
tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm , tisp4240h3lm thru tisp4400h3l m bidirectional thyristor overvoltage protector s 2 november 1997 - revised october 200 0 product information equipment (e.g. between the ring to tip wires for telephones and modems). combinations of devices can be used for multi-point protection (e.g. 3-point protection between ring, tip and ground). the protector consists of a symmetrical voltage-triggered bidirectional thyristor. overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. this low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. the high crowbar holding current prevents d.c. latchup as the diverted current subsides . this tisp4xxxh3lm range consists of seventeen voltage variants to meet various maximum system voltage levels (5 8 v to 32 0 v). they are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. these protection devices are supplied in a do-92 (lm) cylindrical plastic package. the tisp4xxxh3lm is a straight lead do-92 supplied in bulk pack and on tape and reeled. the tisp4xxxh3lmf is a formed lead do-92 supplied only on tape and reeled . absolute maximum ratings , t a = 2 5 c (unless otherwise noted) ratin g symbo l valu e uni t repetitive peak off-state voltage, (see note 1 ) ?4070 ?4080 ?4095 ?4115 ?4125 ?4145 ?4165 ?4180 ?4220 ?4240 ?4250 ?4260 ?4290 ?4300 ?4350 ?4395 ?4400 v dr m 58 65 75 90 100 120 135 145 160 180 190 200 220 230 275 320 30 0 v non-repetitive peak on-state pulse current(see notes 2, 3 and 4 ) i ts p a 2/1 0 s(gr-1089-core, 2/1 0 s voltage wave shape ) 50 0 8/2 0 s(iec 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current ) 30 0 10/16 0 s(fcc part 68, 10/16 0 s voltage wave shape ) 25 0 5/20 0 s(vde 0433, 10/70 0 s voltage wave shape ) 22 0 0.2/31 0 s(i 31-24, 0.5/70 0 s voltage wave shape ) 20 0 5/31 0 s(itu-t k.20/21, 10/70 0 s voltage wave shape ) 20 0 5/31 0 s(ftz r12, 10/70 0 s voltage wave shape ) 20 0 5/32 0 s(fcc part 68, 9/72 0 s voltage wave shape ) 20 0 10/56 0 s(fcc part 68, 10/56 0 s voltage wave shape ) 16 0 10/100 0 s(gr-1089-core, 10/100 0 s voltage wave shape ) 10 0 notes: 1. see applications information and figure 1 0 for voltage values at lower temperatures . 2. initially the tisp4xxxh3lm must be in thermal equilibrium with t j = 2 5 c. 3. the surge may be repeated after the tisp4xxxh3lm returns to its initial conditions . 4. see applications information and figure 1 1 for current ratings at other temperatures .
3 november 1997 - revised october 2000 tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm, tisp4240h3lm thru tisp4400h3lm bidirectional thyristor overvoltage protectors product information non-repetitive peak on-state current(see notes 2, 3 and 5 ) i ts m 55 6 0 2. 3 a 2 0 ms (5 0 hz) full sine wave 16. 7 ms (6 0 hz) full sine wave 100 0 s 5 0 hz/6 0 hz a.c . initial rate of rise of on-state current,exponential current ramp, maximum ramp value < 100 a d i t /d t 40 0 a/ s junction temperatur e t j -40 to +15 0 c storage temperature rang e t st g -65 to +15 0 c notes: 2. initially the tisp4xxxh3lm must be in thermal equilibrium with t j = 2 5 c. 3. the surge may be repeated after the tisp4xxxh3lm returns to its initial conditions . 5. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. see figure 8 for the current ratings at other durations. derate current values at -0.6 1 %/c for ambient temperatures above 2 5 c electrical characteristics, t a = 2 5 c (unless otherwise noted) paramete r test condition s mi n ty p ma x uni t i dr m repetitive peak off- state curren t v d = v dr m t a = 2 5 c t a = 8 5 c 5 1 0 a v (bo ) breakover voltag e dv/d t = 75 0 v/ms, r sourc e = 30 0 w ?4070 ?4080 ?4095 ?4115 ?4125 ?4145 ?4165 ?4180 ?4220 ?4240 ?4250 ?4260 ?4290 ?4300 ?4350 ?4395 ?4400 70 80 95 115 125 145 165 180 220 240 250 260 290 300 350 395 40 0 v absolute maximum ratings , t a = 2 5 c (unless otherwise noted) (continued ) ratin g symbo l valu e uni t
tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm , tisp4240h3lm thru tisp4400h3l m bidirectional thyristor overvoltage protector s 4 november 1997 - revised october 200 0 product information v (bo ) impulse breakover voltag e dv/d t 100 0 v/s, linear voltage ramp, maximum ramp valu e = 50 0 v di/d t = 2 0 a/s, linear current ramp, maximum ramp valu e = 1 0 a ?4070 ?4080 ?4095 ?4115 ?4125 ?4145 ?4165 ?4180 ?4220 ?4240 ?4250 ?4260 ?4290 ?4300 ?4350 ?4395 ?4400 78 88 103 124 134 154 174 189 230 250 261 271 301 311 362 408 41 3 v i (b o ) breakover curren t dv/d t = 75 0 v/ms, r sourc e = 30 0 w 0.1 5 0. 6 a v t on-state voltag e i t = 5 a, t w = 10 0 s 3 v i h holding curren t i t = 5 a, di/d t = -/+3 0 ma/m s 0.1 5 0. 6 a dv/d t critical rate of rise of off-state voltag e linear voltage ramp, maximum ramp valu e < 0.85 v dr m 5 kv/ s i d off-state curren t v d = 5 0 v t a = 8 5 c 1 0 a c of f off-state capacitanc e f = 10 0 khz, v d = 1 v rms, v d = 0, f = 10 0 khz, v d = 1 v rms, v d = - 1 v f = 10 0 khz, v d = 1 v rms, v d = - 2 v f = 10 0 khz, v d = 1 v rms, v d = -5 0 v f = 10 0 khz, v d = 1 v rms, v d = -10 0 v (see note 6 ) 4070 thru ?4115 ?4125 thru ?4220 ?4240 thru ?4400 ?4070 thru ?4115 ?4125 thru ?4220 ?4240 thru ?4400 ?4070 thru ?4115 ?4125 thru ?4220 ?4240 thru ?4400 ?4070 thru ?4115 ?4125 thru ?4220 ?4240 thru ?4400 ?4125 thru ?4220 ?4240 thru ?4400 172 95 92 157 85 80 145 78 72 70 33 28 25 2 2 218 120 115 200 110 100 185 100 90 90 43 35 33 2 8 p f note 6: to avoid possible voltage clipping, the ?4125 is tested with v d = -9 8 v . thermal characteristic s paramete r test condition s mi n ty p ma x uni t r q j a junction to free air thermal resistanc e eia/jesd51-3 pcb, i t = i tsm(1000 ) , t a = 2 5 c, (see note 7 ) 10 5 c/ w 26 5 mm x 21 0 mm populated line card, 4-layer pcb, i t = i tsm(1000 ) , t a = 2 5 c 5 5 note 7: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths . electrical characteristics, t a = 2 5 c (unless otherwise noted) (continued ) paramete r test condition s mi n ty p ma x uni t
5 november 1997 - revised october 2000 tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm, tisp4240h3lm thru tisp4400h3lm bidirectional thyristor overvoltage protectors product information parameter measurement informatio n figure 1. voltage-current characteristic for t and r terminal s all measurements are referenced to the r termina l -v v drm i drm v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i switching characteristic +v +i v (bo) i (bo) v d i d i h i t v t i tsm i tsp -i quadrant iii switching characteristic pmxxaab v drm i drm
tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm , tisp4240h3lm thru tisp4400h3l m bidirectional thyristor overvoltage protector s 6 november 1997 - revised october 200 0 product information typical characteristic s figure 2. figure 3. figure 4. figure 5. off-state current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 | i d | - o f f - s t a t e c u r r e n t - a 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 tchas v d = 50 v normalised breakover voltage vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 n o r m a l i s e d b r e a k o v e r v o l t a g e 0.95 1.00 1.05 1.10 tc4haf on-state current vs on-state voltage v t - on-state voltage - v 0.7 1.5 2 3 4 5 7 1 10 i t - on-state current - a 1.5 2 3 4 5 7 15 20 30 40 50 70 150 200 1 10 100 t a = 25 c t w = 100 s tc4hacb '4240 thru '4400 '4070 thru '4115 '4125 thru '4220 normalised holding current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 n o r m a l i s e d h o l d i n g c u r r e n t 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4had
7 november 1997 - revised october 2000 tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm, tisp4240h3lm thru tisp4400h3lm bidirectional thyristor overvoltage protectors product information typical characteristic s figure 6. figure 7. normalised capacitance vs off-state voltage v d - off-state voltage - v 0.5 1 2 3 5 10 20 30 50 100 150 c a p a c i t a n c e n o r m a l i s e d t o v d = 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t j = 25c v d = 1 vrms tc4haqa '4125 thru '4220 '4240 thru '4400 '4070 thru '4115 differential off-state capacitance vs rated repetitive peak off-state voltage v drm - repetitive peak off-state voltage - v 50 60 70 80 90 150 200 250 300 100 d d c - d i f f e r e n t i a l o f f - s t a t e c a p a c i t a n c e - p f 40 45 50 55 60 65 70 75 80 85 90 d d c = c off(-2 v) - c off(-50 v) tchatb ' 4 0 7 0 ' 4 0 8 0 ' 4 0 9 5 ' 4 1 2 5 ' 4 1 4 5 ' 4 1 6 5 ' 4 1 8 0 ' 4 2 6 0 ' 4 3 0 0 ' 4 3 5 0 ' 4 4 0 0 ' 4 2 4 0 ' 4 1 1 5 ' 4 2 2 0 ' 4 2 5 0 ' 4 2 9 0 ' 4 3 9 5
tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm , tisp4240h3lm thru tisp4400h3l m bidirectional thyristor overvoltage protector s 8 november 1997 - revised october 200 0 product information rating and thermal informatio n figure 8. figure 9. figure 10. figure 11. non-repetitive peak on-state current vs current duration t - current duration - s 01 1 10 100 1000 i t s m ( t ) - n o n - r e p e t i t i v e p e a k o n - s t a t e c u r r e n t - a 1.5 2 3 4 5 6 7 8 9 15 20 30 10 ti4hah v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c thermal impedance vs power duration t - power duration - s 01 1 10 100 1000 z q q j a ( t ) - t r a n s i e n t t h e r m a l i m p e d a n c e - c / w 2 3 4 5 6 8 15 20 30 40 50 60 80 150 10 100 ti4hag i tsm(t) applied for time t eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c v drm derating factor vs minimum ambient temperature t amin - minimum ambient temperature - c -35 -25 -15 -5 5 15 25 -40 -30 -20 -10 0 10 20 d e r a t i n g f a c t o r 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4haia '4240 thru '4440 '4125 thru '4220 '4070 thru '4115 impulse rating vs ambient temperature t a - ambient temperature - c -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 i m p u l s e c u r r e n t - a 90 100 120 150 200 250 300 400 500 600 700 iec 1.2/50, 8/20 itu-t 10/700 fcc 10/560 bellcore 2/10 bellcore 10/1000 fcc 10/160 tc4haa
9 november 1997 - revised october 2000 tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm, tisp4240h3lm thru tisp4400h3lm bidirectional thyristor overvoltage protectors product information applications informatio n deploymen t these devices are two terminal overvoltage protectors. they may be used either singly to limit the voltage between two conductors ( figure 1 2 ) or in multiples to limit the voltage at several points in a circuit ( figure 1 3 ) . in figure 1 2 , protector th1 limits the maximum voltage between the two conductors to v (bo ) . this configuration is normally used to protect circuits without a ground reference, such as modems. in figure 1 3 , protectors th2 and th3 limit the maximum voltage between each conductor and ground to the v (bo ) of the individual protector. protector th1 limits the maximum voltage between the two conductors to its v (bo) value. if the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector th1 is not required . impulse testin g to verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. the table below shows some common values . if the impulse generator current exceeds the protectors current rating then a series resistance can be used to reduce the current to the protectors rated value and so prevent possible failure. the required value of series resistance for a given waveform is given by the following calculations. first, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the protectors rated current. the impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. in some cases the equipment will require verification over a temperature range. by using the rated waveform values from figure 1 1 , the appropriate series resistor value can be calculated for ambient temperatures in the range of -4 0 c to 8 5 c . figure 12. two point protectio n figure 13. multi-point protectio n standar d peak voltage setting v voltage wave form s peak current value a current wave form s tisp4xxxh3 2 5 c rating a series resistance w gr-1089-cor e 250 0 2/1 0 50 0 2/1 0 50 0 0 100 0 10/100 0 10 0 10/100 0 10 0 fcc part 6 8 (march 1998 ) 150 0 10/16 0 20 0 10/16 0 25 0 0 80 0 10/56 0 10 0 10/56 0 16 0 0 150 0 9/72 0 ? 37. 5 5/32 0 ? 20 0 0 100 0 9/72 0 ? 2 5 5/32 0 ? 20 0 0 i312 4 150 0 0.5/70 0 37. 5 0.2/31 0 20 0 0 itu-t k.20/k.2 1 1500 400 0 10/70 0 37.5 10 0 5/31 0 20 0 0 ? fcc part 68 terminology for the waveforms produced by the itu-t recommendation k.21 10/700 impulse generato r th1 th3 th2 th1
tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm , tisp4240h3lm thru tisp4400h3l m bidirectional thyristor overvoltage protector s 1 0 november 1997 - revised october 200 0 product information a.c. power testin g the protector can withstand currents applied for times not exceeding those shown in figure 8 . currents that exceed these times must be terminated or reduced to avoid protector failure. fuses, ptc (positive temperature coefficient) resistors and fusible resistors are overcurrent protection devices which can be used to reduce the current flow. protective fuses may range from a few hundred milliamperes to one ampere. in some cases it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. the current versus time characteristic of the overcurrent protector must be below the line shown in figure 8 . in some cases there may be a further time limit imposed by the test standard (e.g. ul 1459 wiring simulator failure) . capacitanc e the protector characteristic off-state capacitance values are given for d.c. bias voltage, v d , values of 0, - 1 v, - 2 v and -5 0 v. where possible values are also given for -10 0 v. values for other voltages may be calculated by multiplying the v d = 0 capacitance value by the factor given in figure 6 . up to 1 0 mhz the capacitance is essentially independent of frequency. above 1 0 mhz the effective capacitance is strongly dependent on connection inductance. in many applications, such as figure 1 5 and figure 1 7 , the typical conductor bias voltages will be about - 2 v and -5 0 v. figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at - 2 v and the other at -5 0 v . normal system voltage level s the protector should not clip or limit the voltages that occur in normal system operation. for unusual conditions, such as ringing without the line connected, some degree of clipping is permissible. under this condition about 1 0 v of clipping is normally possible without activating the ring trip circuit . figure 1 0 allows the calculation of the protector v dr m value at temperatures below 2 5 c. the calculated value should not be less than the maximum normal system voltages. the tisp4260h3lm, with a v dr m of 20 0 v, can be used for the protection of ring generators producing 10 0 v rms of ring on a battery voltage of -5 8 v (th2 and th3 in figure 1 7 ). the peak ring voltage will be 5 8 + 1.414*100 = 199. 4 v. however, this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. in the extreme case of an unconnected line, clipping the peak voltage to 19 0 v should not activate the ring trip. this level of clipping would occur at the temperature when the v dr m has reduced to 190/200 = 0.95 of its 2 5 c value. figure 1 0 shows that this condition will occur at an ambient temperature of -2 2 c. in this example, the tisp4260h3lm will allow normal equipment operation provided that the minimum expected ambient temperature does not fall below -2 2 c . jesd51 thermal measurement metho d to standardise thermal measurements, the eia (electronic industries alliance) has created the jesd51 standard. part 2 of the standard (jesd51-2, 1995) describes the test environment. this is a 0.028 3 m 3 ( 1 f t 3 ) cube which contains the test pcb (printed circuit board) horizontally mounted at the centre. part 3 of the standard (jesd51-3, 1996) defines two test pcbs for surface mount components; one for packages smaller than 2 7 mm on a side and the other for packages up to 4 8 mm. the lm package measurements used the smaller 76. 2 mm x 114. 3 mm (3. 0 ? x 4. 5 ?) pcb. the jesd51-3 pcbs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. the pcbs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the jesd51 values .
11 november 1997 - revised october 2000 tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm, tisp4240h3lm thru tisp4400h3lm bidirectional thyristor overvoltage protectors product information typical circuit s figure 14. modem inter-wire protectio n figure 15. protection modul e figure 16. isdn protectio n figure 17. line card ring/test protectio n fuse tisp4350 or tisp4400 ai6xbm ring detector hook switch d.c. sink signal modem ring wire tip wire r1a r1b ring wire tip wire th3 th2 th1 protected equipment e.g. line card ai6xbk r1a r1b th3 th2 th1 ai6xbl signal d.c. test relay ring relay slic relay test equip- ment ring generator s1a s1b r1a r1b ring wire tip wire th3 th2 th1 th4 th5 slic slic protection ring/test protection over- current protection s2a s2b s3a s3b v bat c1 220 nf ai6xbj tisp6xxxx, tisppblx, ?tisp6ntp2
tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm , tisp4240h3lm thru tisp4400h3l m bidirectional thyristor overvoltage protector s 1 2 november 1997 - revised october 200 0 product information mechanical dat a device symbolization cod e devices will be coded as below . carrier informatio n devices are shipped in one of the carriers below. a reel contains 2 000 devices. devic e symbolization cod e tisp4070h3l m 4070h 3 tisp4080h3l m 4080h 3 tisp4095h3l m 4095h 3 tisp4115h3l m 4115h 3 tisp4125h3l m 4125h 3 tisp4145h3l m 4145h 3 tisp4165h3l m 4165h 3 tisp4180h3l m 4180h 3 tisp4220h3l m 4220h 3 tisp4240h3l m 4240h 3 tisp4250h3l m 4250h 3 tisp4260h3l m 4260h 3 tisp4290h3l m 4290h 3 tisp4300h3l m 4300h 3 tisp4350h3l m 4350h 3 tisp4395h3l m 4395h 3 tisp4400h3l m 4400h 3 package typ e carrie r order # straight lead do-9 2 bulk pac k tisp4xxxh3l m straight lead do-9 2 tape and reele d tisp4xxxh3lm r formed lead do-9 2 tape and reele d tisp4xxxh3lmf r
13 november 1997 - revised october 2000 tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm, tisp4240h3lm thru tisp4400h3lm bidirectional thyristor overvoltage protectors product information mechanical dat a lm002 (do-92 ) 2-pin cylindrical plastic packag e this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly . . lm002 package (do-92) all linear dimensions in millimeters md4xara 2,20 max. 3,43 min. 12,7 min. 5,21 4,44 2,67 2,03 0,56 0,40 1,40 1,14 2,67 2,41 5,34 4,32 1 3 2 a 0,41 0,35 2,67 2,03 4,19 3,17 3 1 2 view a
tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm , tisp4240h3lm thru tisp4400h3l m bidirectional thyristor overvoltage protector s 1 4 november 1997 - revised october 200 0 product information mechanical dat a lm002 (do-92) - formed leads versio n 2-pin cylindrical plastic packag e this single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. the compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. leads require no additional cleaning or processing when used in soldered assembly . all linear dimensions in millimeters lmf002 (do-92) - formed leads version of lm002 md4xasa 0,41 0,35 2,67 2,03 4,19 3,17 a view a 3 1 2 2,20 max. 3,43 min. 5,21 4,44 2,67 2,03 5,34 4,32 0,56 0,40 4,00 max. 2,90 2,40 2,90 2,40 1 3 2
15 november 1997 - revised october 2000 tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm, tisp4240h3lm thru tisp4400h3lm bidirectional thyristor overvoltage protectors product information mechanical dat a tape dimension s lm002 package (straight lead do-92) tape lm002 tape dimensions conform to the requirements of eia-468-b all linear dimensions in millimeters 11,00 8,50 27,68 17,66 32,00 23,00 2,50 min. 5,48 4,68 3,14 2,14 13,00 12,40 13,70 11,70 19,00 17,50 19,00 5,50 0,50 0,00 9,75 8,50 f f 4,30 3,70 md4xapc adhesive tape on reverse side - shown dashed body indent visible direction of feed tape section shown in view a flat of do-92 body towards reel axis view a
tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm , tisp4240h3lm thru tisp4400h3l m bidirectional thyristor overvoltage protector s 1 6 november 1997 - revised october 200 0 product information mechanical dat a tape dimension s f f 4,21 3,41 5,28 4,88 13,00 12,40 11,00 8,50 16,53 15,50 27,68 17,66 32,00 23,00 13,70 11,70 2,50 min. 19,00 17,50 19,00 5,50 0,50 0,00 9,75 8,50 4,30 3,70 all linear dimensions in millimeters lmf002 package (formed lead do-92) tape lmf002 tape dimensions conform to the requirements of eia-468-b md4xaqc adhesive tape on reverse side - shown dashed body indent visible view a tape section shown in view a flat of do-92 body towards reel axis direction of feed
17 november 1997 - revised october 2000 tisp4070h3lm thru TISP4115H3LM, tisp4125h3lm thru tisp4220h3lm, tisp4240h3lm thru tisp4400h3lm bidirectional thyristor overvoltage protectors product information important notic e power innovations limited (pi) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current . pi warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with pi's standard warranty. testing and other quality control techniques are utilized to the extent pi deems necessary to support th is warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements . pi assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of pi covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. pi semiconductor products are not designed, intended, authorised, or warranted to be suitable for use in life-support applications, devices or systems . copyright ? 2000, power innovations limite d

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